Company Filing History:
Years Active: 2017
Title: Insights into Innovator Hiroshi Kameoka from Kariya, Japan
Introduction: Hiroshi Kameoka, an accomplished inventor hailing from Kariya, Japan, has made significant contributions to the field of semiconductor technology. With a single patent to his name, Kameoka exemplifies innovation within the electronics industry.
Latest Patents: Kameoka's notable patent is centered around a semiconductor device that features a lateral transistor. This innovative device includes a semiconductor substrate with a drift layer, designed specifically for improved electrical performance. Key elements of the patent include a first impurity layer within the drift layer, a channel layer also housed in the drift layer, and a second impurity layer situated in the channel layer. Additional components such as a separation insulation film and a gate electrode enhance the operational efficiency of this semiconductor device. Notably, the field plate in Kameoka's design is larger than the gate electrode in the current direction, providing a unique aspect of this invention.
Career Highlights: Throughout his career, Hiroshi Kameoka has been affiliated with Denso Corporation, a prominent player in the automotive technology sector. His work has contributed to advancements in semiconductor design, underscoring his role as a key innovator within the company.
Collaborations: Kameoka's collaborative efforts extend to working alongside fellow inventors Shigeki Takahashi and Akira Yamada. Their collective expertise has fostered an environment ripe for innovation and technological development in semiconductor applications.
Conclusion: Hiroshi Kameoka stands out as a notable inventor in the realm of semiconductor technology. His patent, stemming from essential developments within Denso Corporation, highlights the impact of innovative minds in advancing electronics. As the technology landscape continues to evolve, Kameoka’s contributions lay a foundational stone for future advancements in semiconductor devices.