Hachiouji, Japan

Hiroshi Ichikawa


Average Co-Inventor Count = 7.0

ph-index = 3

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal3 out of 832,680 
Other
 patents

Years Active: 2002-2004

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3 patents (USPTO):Explore Patents

Title: Hiroshi Ichikawa: Innovator in Semiconductor Technology

Introduction

Hiroshi Ichikawa is a prominent inventor based in Hachiouji, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Synchronous Dynamic Random Access Memory (SDRAM). With a total of three patents to his name, Ichikawa's work has had a notable impact on the efficiency and functionality of memory devices.

Latest Patents

Ichikawa's latest patents focus on advancements in SDRAM technology. One of his patents describes a semiconductor device where the operation mode can be selected between Single Data Rate (SDR) and Double Data Rate (DDR) modes. In the SDR mode, data is transferred unidirectionally via data lines, while in the DDR mode, data is transferred bidirectionally. This innovation allows for improved data handling and synchronization with external clock signals, enhancing the overall performance of memory systems.

Career Highlights

Throughout his career, Hiroshi Ichikawa has demonstrated a commitment to innovation in semiconductor technology. His work has contributed to the evolution of memory devices, making them faster and more efficient. Ichikawa's expertise in this field has positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Ichikawa has collaborated with notable colleagues, including Sadayuki Morita and Takeshi Sakata. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Hiroshi Ichikawa's contributions to the field of semiconductor technology, particularly through his patents on SDRAM, highlight his role as an influential inventor. His work continues to shape the future of memory devices, making significant strides in performance and efficiency.

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