Miyagi, Japan

Hiromi Ogasawara


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Hiromi Ogasawara: Innovator in Semiconductor Manufacturing

Introduction

Hiromi Ogasawara is a notable inventor based in Miyagi, Japan. She has made significant contributions to the field of semiconductor manufacturing, particularly through her innovative patent.

Latest Patents

Ogasawara holds a patent for a method of manufacturing a semiconductor element. This invention involves a semiconductor element that features an upper wiring layer and a lower wiring layer. The two layers communicate through a via-hole, which is filled with tungsten (W). Before the tungsten is deposited via a chemical vapor deposition (CVD) process, a cleaning gas is introduced into the via-hole to eliminate substances that could lead to high resistance. This cleaning step ensures that the semiconductor element maintains low resistance and high reliability.

Career Highlights

Hiromi Ogasawara is currently employed at Oki Electric Industrial Co., Ltd. Her work focuses on advancing semiconductor technologies, which are crucial for various electronic applications.

Collaborations

Ogasawara collaborates with Masashi Takahashi, who is also involved in semiconductor research and development. Their partnership enhances the innovation process within their projects.

Conclusion

Hiromi Ogasawara's contributions to semiconductor manufacturing exemplify her commitment to innovation and technology. Her patent reflects a significant advancement in the field, ensuring improved performance and reliability in semiconductor elements.

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