Hiroki Nishihara

Title: Hiroki Nishihara: Innovator in Silicon Carbide Technology

Introduction

Hiroki Nishihara is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide materials. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Hiroki Nishihara holds a patent for a silicon carbide epitaxial substrate. This invention includes a silicon carbide substrate and a silicon carbide epitaxial film that is positioned on the substrate. The patent details the presence of a first extended defect within the epitaxial film, which consists of a particle and a triangular defect extending from the particle. The basal plane dislocation originating from the particle has specific characteristics that enhance the performance of the substrate. This patent is a testament to his expertise and innovative thinking in the semiconductor industry. He has 1 patent to his name.

Career Highlights

Hiroki Nishihara is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of silicon carbide technology. His work at this esteemed company has allowed him to collaborate with other talented professionals in the field.

Collaborations

Hiroki has worked alongside notable colleagues such as Takaya Miyase and Taro Nishiguchi. Their combined efforts contribute to the advancement of technology in the semiconductor sector.

Conclusion

Hiroki Nishihara is a key figure in the development of silicon carbide technology, with a focus on enhancing semiconductor materials. His innovative patent and collaboration with esteemed colleagues highlight his significant impact on the industry.