Nishiwaki, Japan

Hirokazu Ueda


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: Hirokazu Ueda: Innovator in Ion Implantation Technology

Introduction

Hirokazu Ueda is a prominent inventor based in Nishiwaki, Japan. He is known for his significant contributions to the field of ion implantation technology. His innovative work has led to advancements that enhance device performance in semiconductor manufacturing.

Latest Patents

Hirokazu Ueda holds a patent for a "High current ion implanter and method of ion implant by the implanter." This invention addresses the challenges associated with ion implantation processes, particularly in trench capacitors of DRAM. The technology aims to eliminate the deterioration of device characteristics while increasing beam current. The high current ion implanter features an implantation chamber, a bias plate, a secondary electron implantation cylinder, and an extension cylinder, which is designed to maintain ground potential and has a length of 10 to 25 cm.

Career Highlights

Throughout his career, Ueda has worked with notable companies, including KTI Semiconductor Ltd. and Texas Instruments Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and ion implantation processes.

Collaborations

Ueda has collaborated with esteemed colleagues such as Masuo Koga and Shigeo Yasuda. These partnerships have fostered innovation and development in the field of ion implantation.

Conclusion

Hirokazu Ueda's contributions to ion implantation technology have made a significant impact on the semiconductor industry. His innovative patent and collaborations with industry professionals highlight his role as a key inventor in this field.

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