Hideki Genjyo

Title: Innovations by Hideki Genjyo in Semiconductor Technology

Introduction

Hideki Genjyo is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high load resistance type static random access memory (SRAM). His innovative work has led to advancements that enhance the performance and integration of semiconductor devices.

Latest Patents

Genjyo holds a patent for a semiconductor device featuring a multiple layer resistance layer structure. This invention includes a semiconductor substrate of a first conductivity type, with an impurity diffusion region of a second conductivity type selectively formed thereon. The design incorporates an aluminum interconnection layer positioned over the impurity diffusion region. A double-layer high resistance structure is provided between these layers, consisting of a nitride layer adjacent to the semiconductor substrate and an oxide layer adjacent to the aluminum interconnection layer. This structure allows for the adjustment of resistance to a desired high value by controlling the thickness of the layers, thereby facilitating a high degree of integration of the SRAM.

Career Highlights

Genjyo is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the efficiency of SRAM but has also paved the way for further innovations in the field.

Collaborations

Throughout his career, Genjyo has collaborated with esteemed colleagues such as Junichi Mitsuhashi and Shinichi Satoh. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hideki Genjyo's contributions to semiconductor technology, particularly through his patented innovations, have significantly impacted the industry. His work exemplifies the importance of research and collaboration in driving technological advancements.