Company Filing History:
9 out of 2,916 
2 out of 52,722 
1 out of 681 
Years Active: 1980-1991
Title: The Innovations of Hideharu Egawa
Introduction
Hideharu Egawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work has had a profound impact on the development of advanced semiconductor devices.
Latest Patents
Egawa's latest patents include a semiconductor device featuring a metal silicide layer that connects two regions. This invention describes a method for manufacturing a semiconductor device that includes both p- and n-type regions formed on an insulating substrate. The interconnection layer is an n-type polycrystalline silicon layer, which is electrically coupled with the p- and n-type regions through a metal silicide film. Another notable patent is for a semiconductor circuit that includes a power source terminal set at a positive potential and a reference potential terminal. This circuit utilizes both n-channel and p-channel MOS transistors, showcasing Egawa's innovative approach to semiconductor design.
Career Highlights
Throughout his career, Egawa has worked with notable companies such as Tokyo Shibaura Denki Kabushiki Kaisha and Toshiba Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Egawa has collaborated with esteemed colleagues, including Yasoji Suzuki and Koji Matsuki. Their combined expertise has fostered an environment of innovation and creativity in their projects.
Conclusion
Hideharu Egawa's contributions to semiconductor technology are noteworthy and have paved the way for future advancements in the field. His innovative patents and collaborations reflect his dedication to pushing the boundaries of technology.