Company Filing History:
Years Active: 2002-2005
Title: Innovations by Heung-Kwun Oh in NAND-type Flash Memory Technology
Introduction
Heung-Kwun Oh is a distinguished inventor based in Kyunggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of NAND-type flash memory devices. With a total of three patents to his name, Oh's innovations have had a substantial impact on the electronics industry.
Latest Patents
Among his latest patents is the innovation titled "NAND-type flash memory devices and methods of fabricating the same." This invention includes a complex design of NAND-type flash memory devices that comprise a plurality of isolation layers running parallel to each other, formed at predetermined regions of a semiconductor substrate. The device features a string selection line pattern, multiple word line patterns, and a ground selection line pattern that cross over the isolation layers and active regions. Additionally, the source regions are strategically formed in the active regions adjacent to the ground selection line patterns, optimizing the performance and efficiency of the memory devices.
Career Highlights
Heung-Kwun Oh has established himself as a key inventor at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work in NAND-type flash memory is particularly noteworthy, showcasing his expertise in both innovation and practical application within the industry.
Collaborations
Throughout his career, Oh has collaborated with notable colleagues, including Kwang-Shik Shin and Kyu-Charn Park. Their combined efforts have contributed to the advancements in technology and the successful development of several innovative products within the field of electronics.
Conclusion
In summary, Heung-Kwun Oh's contributions to NAND-type flash memory technology through his patents highlight his role as an influential inventor in the semiconductor industry. His innovative designs and collaborations with talented professionals continue to shape the future of memory devices, ensuring that he remains a key figure in this ever-evolving field.