Henry S Luftman

Title: The Innovations of Henry S. Luftman

Introduction

Henry S. Luftman is a notable inventor based in Fanwood, New Jersey. He has made significant contributions to the field of semiconductor technology. His work focuses on improving doping procedures, which are crucial for the performance of semiconductor devices.

Latest Patents

Luftman holds a patent for "Doping procedures for semiconductor devices." This innovative process describes a method for creating semiconductor devices with highly controlled doping profiles. The process minimizes or eliminates segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields can affect dopant ions, causing them to migrate from their original deposition sites. By illuminating the growth surfaces and utilizing background doping, dopant ions are effectively shielded from these electric fields. Additionally, certain crystallographic directions in specific semiconductors do not exhibit Fermi-level pinning, and lower growth temperatures can help retard or eliminate segregation effects. The devices resulting from this process demonstrate enhanced characteristics with highly accurate and narrow doping profiles.

Career Highlights

Luftman has had a distinguished career at AT&T Bell Laboratories, where he has contributed to various advancements in semiconductor technology. His work has been instrumental in developing processes that enhance the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Luftman has collaborated with notable colleagues, including Rose F. Kopf and J. M. Kuo. These collaborations have further enriched his contributions to the field of semiconductor technology.

Conclusion

Henry S. Luftman is a prominent inventor whose work in semiconductor doping procedures has significantly impacted the industry. His innovative approaches continue to influence the development of advanced semiconductor devices.