Company Filing History:
Years Active: 1992-1993
Title: Innovations of Henry E Brockman
Introduction
Henry E Brockman is a notable inventor based in Horley, GB. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Brockman's latest patents include a semiconductor device having high breakdown voltage. This invention features a semiconductor body with a first device region of one conductivity type and a second device region of the opposite conductivity type. The design allows for a high electric field to exist between the first pn junction and a floating further region, minimizing the risk of device breakdown. Another patent involves a method of manufacturing a semiconductor device, which includes bonding two semiconductor bodies to create a rectifying junction pattern that facilitates the flow of charge carriers.
Career Highlights
Henry E Brockman is associated with U.S. Philips Corporation, where he has contributed to various innovative projects in semiconductor technology. His expertise has led to advancements that improve the efficiency and functionality of electronic devices.
Collaborations
Brockman has worked alongside notable colleagues such as John A Slatter and Jan Haisma, contributing to a collaborative environment that fosters innovation and development in the semiconductor field.
Conclusion
Henry E Brockman's work in semiconductor technology exemplifies the impact of innovation on modern electronics. His patents reflect a commitment to advancing the capabilities of semiconductor devices, ensuring their reliability and performance in various applications.