Company Filing History:
Years Active: 1997-2002
Title: Innovations by Helen M. Dauplaise
Introduction
Helen M. Dauplaise is a notable inventor based in Brockton, MA (US). She has made significant contributions to the field of semiconductor technology, holding three patents to her name. Her work focuses on enhancing the efficiency and performance of semiconductor surfaces.
Latest Patents
One of her latest patents is a method for obtaining a sulfur-passivated semiconductor surface. This innovative approach utilizes an aqueous thiourea-ammonia treatment to create a thin sulfurous film at the indium phosphide surface, with a thickness of less than one nanometer. This treatment can be employed directly or just before the deposition of cadmium sulfide, which enhances surface passivation. Another significant patent involves cadmium sulfide layers for indium phosphide-based heterojunction bipolar transistors. This novel design incorporates cadmium sulfide as the emitter, improving injection efficiency and reducing recombination losses. The large valence band discontinuity between cadmium sulfide and indium phosphide allows for effective use of InP as both the base and collector material.
Career Highlights
Helen M. Dauplaise works for the United States of America as represented by the Secretary of the Air Force. Her career is marked by her dedication to advancing semiconductor technology and her innovative approaches to solving complex engineering challenges.
Collaborations
Helen has collaborated with notable colleagues, including Andrew Richard Davis and Kenneth Vaccaro. Their combined expertise has contributed to the successful development of her patented technologies.
Conclusion
Helen M. Dauplaise's contributions to semiconductor technology through her innovative patents demonstrate her significant impact in the field. Her work continues to influence advancements in semiconductor applications and efficiency.