Hwasung, South Korea

Hee Seog Jeon


Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 2006-2009

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5 patents (USPTO):Explore Patents

Title: Hee Seog Jeon: Innovator in Non-Volatile Memory Technology

Introduction

Hee Seog Jeon is a prominent inventor based in Hwasung, South Korea. He is known for his significant contributions to the field of non-volatile memory devices. With a total of 5 patents to his name, Jeon has made remarkable advancements in memory technology.

Latest Patents

His latest patents include innovative designs for split gate non-volatile memory devices and methods of forming the same. These patents disclose non-volatile memory devices that feature frameworks designed to enhance floating gate coupling ratios. This improvement leads to better programming and erasing efficiency, as well as overall performance. Another notable patent is for a self-aligned split-gate nonvolatile memory structure. This invention includes non-volatile split-gate memory cells with self-aligned floating gate and control gate structures. The manufacturing processes outlined in this patent provide improved dimensional control over the split-gate elements, enhancing both performance and manufacturability.

Career Highlights

Hee Seog Jeon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory devices, making them more efficient and reliable.

Collaborations

Jeon has collaborated with notable colleagues in the field, including Seung Beom Yoon and Yong Tae Kim. Their combined expertise has contributed to the successful development of innovative memory solutions.

Conclusion

Hee Seog Jeon is a key figure in the advancement of non-volatile memory technology. His patents reflect a commitment to innovation and excellence in the field. Through his work at Samsung Electronics, he continues to shape the future of memory devices.

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