Haruo Shindo

Title: Haruo Shindo: Innovator in Plasma Oxidation Technology

Introduction

Haruo Shindo is a notable inventor based in Hiratsuka, Japan. He is recognized for his contributions to the field of plasma oxidation technology. His innovative approach has led to advancements in various applications, particularly in materials processing.

Latest Patents

Shindo holds a patent for a plasma oxidation method and apparatus. This method involves generating oxygen-containing plasma using a process gas that contains oxygen. It includes applying a bias voltage to a substrate placed on a stage and radiating positive and negative ions in the plasma onto the substrate. The process is designed to control the bias potential of the substrate, ensuring that the maximum value (Vmax) and minimum value (Vmin) of the bias potential, along with the plasma potential (Vp), satisfy the relationship: Vmin < Vp < Vmax.

Career Highlights

Throughout his career, Haruo Shindo has worked with prominent organizations, including Fujifilm Corporation and Tokai University Educational System. His experience in these institutions has allowed him to refine his skills and contribute significantly to the field of plasma technology.

Collaborations

Shindo has collaborated with various professionals in his field, including his coworker Shuji Takahashi. Their joint efforts have furthered research and development in plasma oxidation methods.

Conclusion

Haruo Shindo's work in plasma oxidation technology exemplifies innovation and dedication to advancing materials processing techniques. His contributions continue to influence the industry and inspire future research.