Fukushima-ken, Japan

Haruki Souma


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011-2012

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Haruki Souma: Innovator in Semiconductor Technology

Introduction

Haruki Souma is a notable inventor based in Fukushima-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for isolating charge accumulation layers in semiconductor devices.

Latest Patents

Souma's latest patents include a "Method to separate storage regions in the mirror bit device" and "Separation methods for semiconductor charge accumulation layers and structures thereof." Both patents describe devices and methods for isolating adjacent charge accumulation layers in a semiconductor device. In these embodiments, a semiconductor device comprises a bit line formed in a semiconductor substrate, a charge accumulation layer formed on the substrate, a word line formed across the charge accumulation layer, and a channel region formed in the substrate below the word line. The charge accumulation layer is strategically positioned above the channel region, with the width of the word line being narrower than the distance between the end of the channel region and its central part.

Career Highlights

Haruki Souma is currently employed at Spansion LLC, where he continues to develop innovative semiconductor technologies. His work has been instrumental in advancing the efficiency and functionality of semiconductor devices.

Collaborations

Souma has collaborated with notable coworkers, including Fumihiko Inoue and Yukio Hayakawa. Their combined expertise has contributed to the successful development of cutting-edge semiconductor technologies.

Conclusion

Haruki Souma's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods for isolating charge accumulation layers are paving the way for advancements in semiconductor devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…