Haoyu Sun

Title: Haoyu Sun: Innovator in Micro-Nanostructure Doping Methods

Introduction

Haoyu Sun is a prominent inventor based in Hefei, China. He has made significant contributions to the field of micro-nanostructures, particularly through his innovative patent related to defect doping methods. His work is crucial for advancements in various technological applications.

Latest Patents

Haoyu Sun holds a patent for a "Fixed-position defect doping method for micro-nanostructure, and NV center sensor." This patent outlines a self-alignment process that includes several steps: forming a sacrificial layer and a photoresist layer on a crystal substrate, performing lithography to create a mask hole, etching the sacrificial layer, and conducting ion implantation doping. The method culminates in the formation of specific defects through annealing, showcasing a novel approach to micro-nanostructure fabrication.

Career Highlights

Haoyu Sun is affiliated with the University of Science and Technology of China, where he continues to engage in cutting-edge research. His work has garnered attention for its potential applications in various fields, including quantum computing and advanced materials.

Collaborations

Haoyu collaborates with notable colleagues, including Mengqi Wang and Ya Wang. Their combined expertise enhances the research output and innovation within their projects.

Conclusion

Haoyu Sun's contributions to the field of micro-nanostructures through his innovative patent demonstrate his role as a leading inventor. His work not only advances scientific understanding but also paves the way for future technological developments.