Haomiao Wei

Title: Haomiao Wei: Innovator in Semiconductor Technology

Introduction

Haomiao Wei is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to Schottky-barrier diodes. His work is recognized for its potential applications in high-frequency electronics.

Latest Patents

Haomiao Wei holds a patent for a Double Schottky-barrier diode. This invention includes a semi-insulating substrate and features three mesas formed by growth and etching. The design incorporates two anode probes and two air-bridge fingers. The unique configuration allows for the two Schottky contacts to be closely fabricated on the same mesa in a back-to-back manner. This arrangement results in even symmetric C-V characteristics and odd symmetric I-V characteristics. The output of a frequency multiplier using this diode produces only odd harmonics, making it suitable for high-order frequency multipliers. The cathodes of the Schottky contacts are connected by a buffer layer without ohmic contact.

Career Highlights

Haomiao Wei is affiliated with the University of Electronic Science and Technology of China. His academic background and research focus have positioned him as a key figure in semiconductor innovation. His work has implications for various applications in electronics and telecommunications.

Collaborations

Haomiao Wei has collaborated with notable colleagues, including Yong Zhang and Chengkai Wu. Their joint efforts contribute to advancing research in semiconductor technologies.

Conclusion

Haomiao Wei's contributions to the field of semiconductor technology, particularly through his patent for the Double Schottky-barrier diode, highlight his innovative spirit and dedication to advancing electronic applications. His work continues to influence the development of high-frequency electronics.