Henan, China

Hao Yang


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2023

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hao Yang - Innovator in Memory Management Technology

Introduction

Hao Yang is a notable inventor based in Henan, China. He has made significant contributions to the field of memory management technology. His innovative approach has led to the development of a unique patent that addresses key challenges in memory storage and control.

Latest Patents

Hao Yang holds a patent titled "Method for recording unit management information, memory storage device and memory control circuit unit." This patent discloses a memory management method that includes performing a first write operation to store first data in a physical unit. It also involves recording unit management information that reflects the usage order of physical units. The method further includes a data merge operation to copy data from one physical unit to another, ensuring efficient memory management.

Career Highlights

Hao Yang is currently employed at Hefei Core Storage Electronic Limited, where he continues to innovate in the field of memory technology. His work focuses on enhancing the efficiency and reliability of memory storage devices. His contributions have been instrumental in advancing the capabilities of memory control circuits.

Collaborations

Hao Yang collaborates with talented professionals in his field, including Wan-Jun Hong and Yang Zhang. Their combined expertise fosters a creative environment that drives innovation in memory management solutions.

Conclusion

Hao Yang's contributions to memory management technology exemplify the impact of innovative thinking in the tech industry. His patent and ongoing work at Hefei Core Storage Electronic Limited highlight his commitment to advancing memory technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…