Company Filing History:
Years Active: 2022-2024
Title: Innovations of Hao Wang in Atomic Layer Deposition
Introduction
Hao Wang is a notable inventor based in Phoenix, AZ, who has made significant contributions to the field of atomic layer deposition. With a total of two patents to his name, Wang's work focuses on advanced methods for depositing transition metal nitride films on substrates. His innovative approaches have the potential to enhance various applications in materials science and semiconductor manufacturing.
Latest Patents
Hao Wang's latest patents include methods for depositing a transition metal nitride film on a substrate by atomic layer deposition. The disclosed apparatus and method involve a reaction space defined by at least one chamber wall and a showerhead. The apparatus features a substrate support designed to hold at least one substrate and a temperature control system that regulates the temperature of the chamber wall exposed to vapor phase reactants. Additionally, the temperature control system for the showerhead is configured to maintain a temperature between approximately 80° C. and 160° C. The method entails providing at least one substrate on the substrate support, controlling the temperature of the chamber wall, and sequentially feeding at least two vapor phase reactants into the reaction space.
Career Highlights
Hao Wang is currently employed at Asm IP Holding B.V., where he continues to develop innovative technologies in the field of atomic layer deposition. His expertise and contributions have positioned him as a valuable asset in the research and development sector.
Collaborations
Wang has collaborated with notable colleagues, including Eric James Shero and Robert Brennan Milligan, to advance their shared goals in innovation and technology development.
Conclusion
Hao Wang's work in atomic layer deposition exemplifies the spirit of innovation in the field of materials science. His patents reflect a commitment to advancing technology and improving manufacturing processes.