Singapore, Singapore

Hao Meng

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • S.E. Minneapolis, MN (US) (2010)
  • Singapore, SG (2012 - 2017)

Company Filing History:


Years Active: 2010-2017

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6 patents (USPTO):

Title: The Innovative Mind of Hao Meng: Pioneering Advances in Memory Cell Technology

Introduction

Hao Meng is an accomplished inventor based in Singapore, SG, holding a remarkable portfolio of six patents. His contributions to the field of memory cell technology have significantly influenced the landscape of efficient computing solutions. With a focus on energy efficiency and advanced magnetoresistive devices, Meng's work exemplifies the power of innovation in technology.

Latest Patents

Hao Meng's latest patents include groundbreaking inventions such as the "Energy Efficient Three-Terminal Voltage Controlled Memory Cell," which details a memory cell architecture featuring at least three terminals and a dual magnetic tunnel junction (MTJ) structure. This innovative design enhances data storage capabilities by employing a first magnetic layer that uses an electric field to control the magnetization direction for data retention. Additionally, the "Magnetoresistive Device and a Method of Forming the Same" presents a sophisticated construct comprising a fixed magnetic layer, a free magnetic layer, and an offsetting magnetic layer, further pushing the boundaries of magnetoresistive technology.

Career Highlights

Throughout his career, Hao Meng has made significant strides in research and development, having worked with esteemed organizations such as the Agency for Science, Technology and Research and Seagate Technology Incorporated. His work in these institutions has been pivotal in advancing technologies that rely on innovative memory solutions and magnetoresistive devices.

Collaborations

Meng's journey is enriched by collaborations with notable colleagues, including Yonghua Chen and Rachid Sbiaa. These partnerships have fostered an environment of shared knowledge and creativity, enabling the development of cutting-edge technologies that address contemporary challenges in data storage and retrieval.

Conclusion

Hao Meng's contributions to the field of memory technology and magnetoresistive devices illustrate the profound impact that thoughtful innovation can have on industry standards and practices. As he continues to explore new avenues for advancement, his work serves as an inspiration for future inventors and researchers striving to push the boundaries of technology.

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