Hao-Chien Hsu

Title: Innovations of Hao-Chien Hsu in Metal Oxide Technology

Introduction

Hao-Chien Hsu is a notable inventor based in San Jose, CA, who has made significant contributions to the field of metal oxide technology. His work primarily focuses on enhancing the stability and performance of thin-film transistors (TFTs) through innovative methods.

Latest Patents

Hsu holds a patent titled "Oxygen vacancy of IGZO passivation by fluorine treatment." This patent describes methods for forming a TFT that includes a metal oxide layer. The process involves treating the metal oxide layer with a fluorine-containing gas or plasma. This fluorine treatment effectively fills the oxygen vacancies in the metal oxide channel layer, resulting in a more stable TFT and preventing a negative threshold voltage.

Career Highlights

Hao-Chien Hsu is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display technology sectors. His expertise in metal oxide layers has positioned him as a valuable asset in the development of advanced electronic devices.

Collaborations

Hsu collaborates with talented professionals in his field, including Dong-Kil Yim and Tae Kyung Won. Their combined efforts contribute to the advancement of technologies that enhance the performance of electronic components.

Conclusion

Hao-Chien Hsu's innovative work in metal oxide technology and his patent on fluorine treatment methods demonstrate his commitment to improving the stability of TFTs. His contributions are essential in the ongoing evolution of electronic devices.