Hans-Joachim Müssig

Title: The Innovations of Hans-Joachim Müssig

Introduction

Hans-Joachim Müssig is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and efficiency of semiconductor components.

Latest Patents

Müssig's latest patents include a production process for a semiconductor component with a praseodymium oxide dielectric. This invention involves a semiconductor component that features a silicon-bearing layer, a praseodymium oxide layer, and a mixed oxide layer. The mixed oxide layer enhances the capacitance of the component while achieving high charge carrier mobility without requiring a silicon oxide intermediate layer. Another significant patent is for a semiconductor capacitor that utilizes praseodymium oxide as a dielectric. This design includes a first semiconductor layer that acts as a capacitor electrode, with a thin intermediate layer serving as a diffusion barrier for oxygen, which can include oxynitride.

Career Highlights

Throughout his career, Müssig has worked with Ihp GmbH, an institute focused on innovations for high performance and microelectronics. His expertise in semiconductor technology has positioned him as a key figure in advancing this field.

Collaborations

Müssig has collaborated with notable professionals such as Peter Storck and Thomas Schröder, contributing to various projects and innovations in semiconductor technology.

Conclusion

Hans-Joachim Müssig's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His innovative approaches continue to influence advancements in microelectronics.