Summit, NJ, United States of America

Hans J Stocker


Average Co-Inventor Count = 1.8

ph-index = 4

Forward Citations = 146(Granted Patents)


Location History:

  • Summit, NJ (US) (1979 - 1984)
  • Austin, TX (US) (1990)

Company Filing History:


Years Active: 1979-1990

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hans J. Stocker

Introduction

Hans J. Stocker is a notable inventor based in Summit, NJ (US), recognized for his significant contributions to the field of etching technologies. With a total of 4 patents to his name, Stocker has developed methods that enhance the precision and efficiency of metal layer etching processes.

Latest Patents

Among his latest patents, Stocker has introduced a "Method for Tapered Etching," which involves etching metal layers, including aluminum, to create tapered sidewalls. This innovative method utilizes trifluoromethane and chlorine in controlled amounts to achieve a tapered metal layer profile. Another significant patent is the "Two-Step Anisotropic Etching Process for Patterning a Layer Without," which allows for the patterning of a thick silicon nitride layer without penetrating the underlying silicon dioxide layer. This process employs a two-step reactive ion etching procedure, ensuring that the silicon nitride layer is completely penetrated while preserving the silicon dioxide layer.

Career Highlights

Throughout his career, Stocker has worked with prestigious organizations such as AT&T Bell Laboratories and Bell Telephone Laboratories. His experience in these leading research institutions has contributed to his expertise in etching technologies and semiconductor fabrication.

Collaborations

Stocker has collaborated with notable colleagues, including Craig N. Bredbenner and Troy A. Giniecki, further enhancing the innovative work produced in his field.

Conclusion

Hans J. Stocker's contributions to the field of etching technologies have made a lasting impact on the industry. His innovative patents and collaborations reflect his dedication to advancing the science of semiconductor processing.

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