Company Filing History:
Years Active: 2019
Title: Haltao Sun: Innovator in Nonvolatile Resistive Switching Memory Technology
Introduction
Haltao Sun is a prominent inventor based in Beijing, China. He is known for his significant contributions to the field of memory technology, particularly in the development of nonvolatile resistive switching memory devices. His innovative approach has led to advancements that could enhance data storage solutions.
Latest Patents
Haltao Sun holds a patent for a manufacturing method for a nonvolatile resistive switching memory device. This device includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A unique feature of his invention is the graphene intercalation layer with nanopores, which plays a crucial role in controlling metal ions formed during the programming of the device. This layer ensures that metal ions enter the resistive switching functional layer only through the nanopores, effectively managing the growth of conductive filaments.
Career Highlights
Haltao Sun is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced memory technologies. His work has garnered attention for its potential applications in improving data storage efficiency and reliability.
Collaborations
Haltao Sun has collaborated with notable colleagues, including Qi Liu and Ming Liu. Their combined expertise contributes to the innovative research being conducted at the Chinese Academy of Sciences.
Conclusion
Haltao Sun's contributions to nonvolatile resistive switching memory technology highlight his role as a key innovator in the field. His patent and ongoing research promise to advance the capabilities of memory devices, paving the way for future developments in data storage solutions.