Newark, DE, United States of America

Habib Hichri


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Habib Hichri: Innovator in Semiconductor Technology

Introduction

Habib Hichri is a notable inventor based in Newark, DE (US). He has made significant contributions to the field of semiconductor technology, particularly in the production of supported monophasic group I-III-VI semiconductor films. His work has implications for photovoltaic applications, especially in solar cells.

Latest Patents

Hichri holds a patent titled "Process for preparing group Ib-IIIa-VIa semiconducting films." This patent outlines methods for producing supported monophasic group I-III-VI semiconductor films. The process involves coating a substrate with group I and III elements, followed by exposure to a reactive group VI element atmosphere. This method results in a composite coating that is subsequently annealed to create a monophasic semiconductor film. The films produced are particularly useful as absorber layers in solar cells.

Career Highlights

Hichri is affiliated with the University of Delaware, where he continues to advance research in semiconductor technologies. His innovative approaches have garnered attention in the scientific community, contributing to the development of more efficient solar energy solutions.

Collaborations

Hichri has collaborated with esteemed colleagues such as Robert W. Birkmire and Jerold M. Schultz. These partnerships have enhanced the research and development of semiconductor technologies, fostering a collaborative environment for innovation.

Conclusion

Habib Hichri's work in semiconductor technology exemplifies the impact of innovative research on renewable energy solutions. His contributions are paving the way for advancements in solar cell technology, highlighting the importance of continued innovation in this field.

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