H L Chen

Title: Innovations by H L Chen in Silicon Nitride Film Technology

Introduction

H L Chen, based in Taipei, Taiwan, is an innovative inventor known for his contributions to the field of semiconductor materials. With a focus on developing advanced materials for photolithography, he has made significant advancements in the formation of silicon nitride films.

Latest Patents

H L Chen holds a patent for the "Formation of silicon nitride film for a phase shift mask at 193 nm." This invention discloses a half-tone phase shift mask material that is suitable for use at 193 nm wavelengths. The patent details a process of forming a layer of nitrogen-rich silicon nitride by subjecting a mixture of nitrogen-bearing gases, such as nitrogen and/or ammonia, along with silicon-bearing gases like silane, to a plasma discharge. The specified ratio of nitrogen to silicon gases, approximately 10 to 1, results in films exhibiting critical optical properties required for photolithographic applications at 193 nm. These properties include a reflectance of less than 15%, and a transmittance between 4 and 15%. The films also maintain a stable extinction coefficient of about 0.4 and a refractive index of about 2.5. Furthermore, the stability of the films under prolonged UV exposure and their favorable etch behavior enhances their practical application in the industry.

Career Highlights

H L Chen is associated with the Industrial Technology Research Institute, a prominent research institution in Taiwan that plays a vital role in technology development and innovation. His work at the institute emphasizes enhancing materials for semiconductor manufacturing processes, contributing to the development of more efficient photolithography techniques.

Collaborations

Throughout his career, H L Chen has collaborated with talented individuals such as Chang-Ming Dai and Lon A Wang. Their joint efforts have facilitated the exploration of innovative solutions in semiconductor materials, showcasing the power of teamwork in achieving breakthroughs in technology.

Conclusion

H L Chen's contributions to the semiconductor industry through his patent for silicon nitride film technology reflect a deep commitment to innovation and research. His work at the Industrial Technology Research Institute, along with his collaborations, highlights the significance of advancing material science for future technologies. As the demand for precision in photolithography continues to grow, inventions like those of H L Chen will play a crucial role in the development of next-generation semiconductor devices.