Monsey, NY, United States of America

H Daniel Schnurmann


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: H Daniel Schnurmann: Innovator in Integrated Circuit Technology

Introduction

H Daniel Schnurmann is a notable inventor based in Monsey, NY (US). He has made significant contributions to the field of integrated circuit technology, particularly in the area of electromigration prevention.

Latest Patents

Schnurmann holds 1 patent for his invention titled "Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration." This innovative interconnection wiring structure is designed to enhance the reliability of integrated circuit chips by eliminating electromigration. The structure features segments of aluminum interspersed with segments of refractory metal, ensuring electrical continuity while forcing the electrical current to sequentially cross these segments. The design can be further enhanced by adding underlayers or overlayers made of refractory metal, and it can be expanded to include vias or studs linking interconnection lines at different levels of the IC chip.

Career Highlights

Schnurmann is associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to contribute to advancements in semiconductor technology and integrated circuit design.

Collaborations

Throughout his career, Schnurmann has collaborated with notable colleagues, including Glenn A Biery and Daniel Mark Boyne. These collaborations have fostered innovation and development in the field of electronics.

Conclusion

H Daniel Schnurmann's contributions to integrated circuit technology, particularly through his patented invention, demonstrate his commitment to advancing the field. His work continues to influence the design and reliability of electronic components.

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