Company Filing History:
Years Active: 1976
Title: H Bernard Pogge: Innovator in Light Emitting Diode Technology
Introduction
H Bernard Pogge, an accomplished inventor based in Hopewell Junction, NY, has made significant contributions to the field of light-emitting diodes (LEDs). With a unique patent that showcases his innovative spirit, Pogge has become a notable figure in the technological landscape. His work emphasizes the importance of advancing semiconductor technology, particularly in the area of gallium phosphide (GaP) deposition processes.
Latest Patents
Pogge holds a patent for a groundbreaking two-stage heteroepitaxial deposition process for GaP/Si. This innovative process focuses on producing light-emitting diodes by first pyrolytically depositing a primer layer of GaP on a silicon substrate. The design ensures the epitaxial film thickness achieves complete coalescence of the epitaxial nuclei while remaining thin enough to prevent cracks due to thermal expansion stresses. The specified thickness of the primer layer generally ranges from 0.1 to 10 micrometers. Subsequently, a second layer of GaP is deposited using the standard halide transport process, with thicknesses varying from 2 to 5 micrometers or higher. For GaP LEDs, this layer thickness can reach 10 to 40 micrometers, while for gallium arsenide phosphide (GaAsP) LEDs, the GaP thickness is typically 2 to 5 micrometers, eventually transitioning into a GaAsP graded composition.
Career Highlights
H Bernard Pogge's primary affiliation has been with the International Business Machines Corporation (IBM), where he has demonstrated his commitment to innovation in technology. His role at IBM has allowed him to work on advanced semiconductor technologies, paving the way for new applications in various electronic devices.
Collaborations
Throughout his career, Pogge has collaborated with esteemed colleagues such as Robert W. Broadie and Bernard M. Kemlage, contributing to a collective effort to advance light-emitting diode technologies. These collaborations highlight the importance of teamwork in scientific research and development.
Conclusion
H Bernard Pogge's achievements in the field of light-emitting diodes exemplify the impact of innovation on technology. His patented process for GaP/Si deposition represents a significant advancement, showcasing his dedication to enhancing the efficiency and reliability of semiconductor devices. As technology continues to evolve, the contributions of inventors like Pogge will undoubtedly shape the future of electronics.