Company Filing History:
Years Active: 2025
Title: Guoquan Zhang: Innovator in Lithium Niobate Semiconductor Technology
Introduction: Guoquan Zhang is a prominent inventor based in Tianjin, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on lithium niobate materials. His expertise and research have led to advancements that are crucial for various applications in electronics.
Latest Patents: Guoquan Zhang holds a patent for a lithium niobate semiconductor structure and its manufacturing method. This patent describes a unique structure that includes a first lithium niobate material layer, a second lithium niobate material layer, and a third lithium niobate material layer. The polarization directions of the ferroelectric domains in these layers are strategically arranged to enhance the performance of the semiconductor. Specifically, the first and second layers share the same polarization direction, while the third layer has an opposite direction, creating a balanced and effective semiconductor structure. He has 1 patent to his name.
Career Highlights: Guoquan Zhang is affiliated with Nankai University, where he conducts research and teaches. His work at the university has allowed him to collaborate with other experts in the field and contribute to the academic community. His research focuses on the development of advanced materials and their applications in technology.
Collaborations: Some of Guoquan Zhang's notable coworkers include Yuezhao Qian and Yuchen Zhang. Their collaborative efforts have furthered research in semiconductor technology and have led to innovative solutions in the field.
Conclusion: Guoquan Zhang's contributions to lithium niobate semiconductor technology highlight his role as an influential inventor. His patent and research efforts continue to impact the field, showcasing the importance of innovation in advancing technology.