Company Filing History:
Years Active: 2023
Title: Guo Chunqiu: Innovator in Subterranean Simulation Technologies
Introduction
Guo Chunqiu is a notable inventor based in Beijing, China. He has made significant contributions to the field of subterranean simulation technologies. His work focuses on the integration of physical and numerical simulations to enhance the understanding of subterranean characteristics.
Latest Patents
Guo Chunqiu holds a patent for "Systems and methods for combined physical and numerical simulation of subterranean characteristics." This innovative technique models subterranean characteristics by combining physical and numerical simulations using limited amounts of subsurface full diameter core samples via orthogonal experimentation schemes. The systems and methods he developed apply synchronous fitting and prediction of physical simulation and numerical simulation to obtain the equivalent permeability of fracture cells in numerical simulation. This provides a basis for assigning a value to the equivalent fracture cell permeability during numerical simulation. His research also includes conducting water invasion orthogonal experiments by combining physical simulation with numerical simulation to analyze the main factors of water invasion in reservoirs.
Career Highlights
Throughout his career, Guo Chunqiu has worked with esteemed organizations such as the Research Institute of Petroleum Exploration and Development and Southwest Petroleum University. His expertise in subterranean simulation has positioned him as a key figure in this specialized field.
Collaborations
Guo has collaborated with notable colleagues, including Wang Hongjun and Chen Pengyu, contributing to advancements in subterranean research and technology.
Conclusion
Guo Chunqiu's innovative work in subterranean simulation technologies exemplifies the importance of integrating physical and numerical methods to enhance our understanding of subsurface characteristics. His contributions continue to influence the field and pave the way for future advancements.
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