Gregory Fitzgibbon

Title: Gregory Fitzgibbon: Innovator in Germanium Deposition Technology

Introduction

Gregory Fitzgibbon is a notable inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of germanium deposition.

Latest Patents

Fitzgibbon holds a patent for a method titled "Nonselective germanium deposition by UHV/CVD." This innovative technique involves depositing germanium (Ge) on a silicon (Si) substrate within a reaction chamber. The process includes several steps: precleaning the substrate, evacuating the chamber to a pressure below 10^-7 Torr, heating the substrate to a temperature range of 300°C to 600°C, and providing a gas mixture of GeH4, B2H6, and He. The specific partial pressures for GeH4 and B2H6 are maintained at 2-50 mTorr and 0.08 to 2 mTorr, respectively.

Career Highlights

Fitzgibbon is associated with the International Business Machines Corporation (IBM), where he has applied his expertise in semiconductor fabrication. His work has contributed to advancements in the efficiency and effectiveness of germanium deposition processes.

Collaborations

Some of his notable coworkers include Shahzad Akbar and Jack Oon Chu, who have collaborated with him on various projects within the field.

Conclusion

Gregory Fitzgibbon's innovative work in germanium deposition technology exemplifies the impact of inventors in advancing semiconductor manufacturing processes. His contributions continue to influence the industry and pave the way for future innovations.