Company Filing History:
Years Active: 2019
Title: Innovations of Graham E Rowlands
Introduction
Graham E Rowlands is a notable inventor based in Ithaca, NY (US). He has made significant contributions to the field of magnetic tunnel junction circuits. His work focuses on enhancing the performance and efficiency of these circuits through innovative technologies.
Latest Patents
Graham E Rowlands holds a patent for "Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect." This technology provides various implementations of a device based on the spin Hall effect (SHE) and spin transfer torque (STT) effect. The device includes a magnetic structure with a ferromagnetic layer that can change its magnetization direction through spin transfer torque. It also features a SHE layer that generates a spin-polarized current in response to an applied charge current. The device operates at a low write error rate with pulse durations of around 2 ns or shorter, allowing for efficient switching of the magnetization direction.
Career Highlights
Graham E Rowlands is affiliated with Cornell University, where he continues to advance research in magnetic technologies. His work has implications for various applications, including data storage and processing.
Collaborations
He has collaborated with notable colleagues such as Sriharsha V Aradhya and Robert A Buhrman, contributing to the advancement of research in his field.
Conclusion
Graham E Rowlands is a prominent inventor whose work in magnetic tunnel junction circuits showcases his innovative spirit and dedication to advancing technology. His contributions are paving the way for future developments in the field.