Gong Hao

Title: Innovations by Gong Hao in MOSFET Technology

Introduction

Gong Hao is a notable inventor based in Singapore, SG. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFETs. His innovative approach has led to advancements that enhance the performance and reliability of these essential electronic components.

Latest Patents

Gong Hao holds a patent for an embedded polysilicon gate MOSFET. This invention describes the formation of a MOSFET with a polysilicon gate electrode embedded within a silicon trench. The design retains all the features of conventional MOSFETs with photolithographically patterned polysilicon gate electrodes. It includes robust lightly doped drain (LDD) regions formed along the walls of the trench. The process ensures that the gate dielectric is never exposed to plasma etching or aqueous chemical etching, allowing for the formation of gate dielectric films of under 100 Angstroms without defects. This innovation addresses the issues of over etching and substrate spiking that are common in the manufacture of traditional polysilicon gate electrodes. Remarkably, the entire process utilizes only two photolithographic steps, making it efficient while protecting the thin gate oxide.

Career Highlights

Gong Hao's career is marked by his dedication to advancing semiconductor technology. His work has not only contributed to the field but has also paved the way for future innovations in MOSFET design and manufacturing processes. His patent reflects a deep understanding of the challenges faced in the industry and offers a practical solution that enhances device performance.

Collaborations

Gong Hao has collaborated with talented individuals such as Lap Chan and Cher Liang Cha. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Gong Hao's contributions to the field of MOSFET technology exemplify the spirit of innovation. His patented work on embedded polysilicon gate MOSFETs showcases his ability to solve complex problems in semiconductor manufacturing. His achievements continue to influence the industry and inspire future advancements.