Poughkeepsie, NY, United States of America

Goerge R Goth


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1981

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Goerge R Goth: Innovator in Bipolar Transistor Fabrication

Introduction

Goerge R Goth is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of bipolar transistors. His innovative approach has led to advancements that are crucial for modern electronic devices.

Latest Patents

Goerge R Goth holds a patent for a "Bipolar transistor fabrication process with an ion implanted emitter." This patent describes a method for forming a very high current ion implanted emitter in a diffused base. The process involves creating windows through silicon nitride and silicon dioxide layers to access both the base contact and emitter regions. These regions are protected by resist, and a collector contact window is opened through the remaining silicon dioxide layer. After removing the resist mask, a screen oxide is grown in all exposed areas. A resist mask is then applied to cover only the base and Schottky anode regions, followed by arsenic implantation through the exposed screened areas. An etch back step is performed to remove the top damaged layer, and the emitter drive-in is completed with some remaining screen oxide serving as a cap.

Career Highlights

Goerge R Goth has had a distinguished career at International Business Machines Corporation (IBM). His work has been instrumental in advancing semiconductor technologies, which are foundational to many electronic applications today. His innovative methods have contributed to the efficiency and performance of bipolar transistors.

Collaborations

Throughout his career, Goerge R Goth has collaborated with several talented individuals, including Conrad A Barile and James S Makris. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.

Conclusion

Goerge R Goth's contributions to bipolar transistor fabrication highlight his role as a key innovator in the semiconductor industry. His patent and collaborative efforts continue to influence the development of electronic technologies.

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