Company Filing History:
Years Active: 2011
Title: Gitae Jeong: Innovator in Resistance Variable Memory Technology
Introduction: Gitae Jeong is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, holding two patents that showcase his expertise and innovative approach. His work plays a crucial role in advancing how data is written and stored, particularly in resistance variable memory devices.
Latest Patents: Gitae Jeong's latest patents focus on a resistance variable memory device and methods for writing data. One notable method involves programming a resistance variable memory cell to a specific logic state. This process includes applying a first programming current to the memory cell, executing a verify read by sensing the logic state of the cell, and applying a second programming current if the sensed logic state differs from the intended state. The second programming current is intentionally set greater than the first, ensuring effective data programming.
Career Highlights: Gitae Jeong is associated with Samsung Electronics Co., Ltd., a global leader in technology. His cutting-edge innovations in memory technology enhance the company’s reputation as a pioneer in electronic devices and applications. By developing advanced methods for data programming, Gitae contributes to improving overall performance and efficiency in memory storage solutions.
Collaborations: Throughout his career, Gitae Jeong has collaborated with esteemed colleagues such as Jung Hyuk Lee and Kwangjin Lee. Together, they work to push the boundaries of memory technology, fostering an environment of innovation and advancement within their projects at Samsung Electronics.
Conclusion: Gitae Jeong stands out as a key inventor in the field of resistance variable memory devices. With his two patents, he has significantly impacted the technology sector, particularly in data storage methodology. His ongoing collaborations and contributions to Samsung Electronics Co., Ltd. promise to pave the way for future advancements and innovations in the memory technology landscape.