Ginjiro Kambara

Title: Ginjiro Kambara: Innovator in Semiconductor Technology

Introduction

Ginjiro Kambara is a notable inventor based in Ashiya, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to memory devices and impurity diffusion methods.

Latest Patents

One of Kambara's latest patents is for a non-volatile memory device. This invention provides a memory device of MNOS FET type, wherein a high concentration part and a low concentration part contact each other in the source region and the drain region. Additionally, double-layered insulation films under the gate electrode extend across the source region and drain region, contacting only the lower concentration part. This design prevents an acceptor impurity from mixing into the double-layered insulation films from the source region and drain region, greatly improving the life of the device. Another significant patent is for a method of diffusing an impurity into a semiconductor body. In this method, a silicon oxide layer containing a group III element such as boron, aluminum, or gallium is formed on a semiconductor substrate. The substrate is then heat-treated in a nitrogen atmosphere, allowing for controlled impurity diffusion, which is particularly useful in forming the base region of an NPN transistor.

Career Highlights

Kambara has worked with prominent companies in the electronics industry, including Matsushita Electronics Corporation and Matsushita Electric Industrial Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Kambara has collaborated with notable colleagues such as Susumu Koike and Toshio Matsuda. These partnerships have likely fostered a creative environment that has led to advancements in their respective fields.

Conclusion

Ginjiro Kambara's contributions to semiconductor technology through his patents and career experiences highlight his role as an innovator in the industry. His work continues to influence advancements in memory devices and impurity diffusion methods.