Company Filing History:
Years Active: 2010
Title: Innovations of Gin-Min Lin in Thin-Channel TFT Structures
Introduction
Gin-Min Lin is an accomplished inventor based in Yilan, Taiwan. He has made significant contributions to the field of thin-film transistors (TFTs), particularly through his innovative patent that simplifies the fabrication process of staggered source/drain and thin-channel TFT structures. His work is instrumental in advancing the efficiency and effectiveness of electronic devices.
Latest Patents
Gin-Min Lin holds a patent for a "Staggered source/drain and thin-channel TFT structure and fabrication method thereof." This invention relates to a process that simplifies the conventional fabrication methods by reducing the number of mask steps. It achieves better results in suppressing the electric field near the drain junction and minimizing leakage current. The process involves several key steps, including re-crystallizing amorphous silicon (a-Si) into polycrystalline silicon (poly-Si), defining the gate region, source/drain region, and channel, as well as applying implantation and connection techniques.
Career Highlights
Gin-Min Lin is affiliated with National Yang Ming Chiao Tung University, where he continues to contribute to research and development in the field of electronics. His innovative approaches have garnered attention and recognition within the academic and industrial communities.
Collaborations
Gin-Min Lin has collaborated with Kow-Ming Chang, a fellow researcher, to further explore advancements in TFT technology. Their partnership exemplifies the collaborative spirit in research and innovation.
Conclusion
Gin-Min Lin's contributions to the field of thin-channel TFT structures highlight his innovative spirit and dedication to improving electronic fabrication processes. His patent serves as a testament to his expertise and the potential for future advancements in technology.