Anyang-si, South Korea

Gil-Sang Han


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovations of Gil-Sang Han in Titanium Oxide Nano Tube Materials

Introduction

Gil-Sang Han is a notable inventor based in Anyang-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of titanium oxide nano tube materials. His innovative work has implications for various applications, especially in photoelectric devices.

Latest Patents

One of Gil-Sang Han's key patents is focused on a titanium oxide nano tube material and the method for manufacturing it. This patent describes a titanium oxide nano tube material that is configured so that the crystal grains of the nano tube have a crystal structure oriented with the [001] direction of a tetragonal crystal system as a preferred direction. The Full Width at Half Maximum (FWHM) of a rocking curve with respect to the (004) plane peak is noted to be between 11.1 degrees and 20.3 degrees. This orientation contributes to the excellent photoelectric characteristics of the material, making it a valuable asset in the field.

Career Highlights

Gil-Sang Han is associated with the SNU RDB Foundation, where he continues to advance his research and development efforts. His work has garnered attention for its innovative approach to material science, particularly in the context of nano technology.

Collaborations

He has collaborated with notable colleagues, including Sang-Wook Lee and Ik-Jae Park, who share his commitment to advancing research in this field.

Conclusion

Gil-Sang Han's contributions to the development of titanium oxide nano tube materials highlight his innovative spirit and dedication to advancing technology. His work not only enhances our understanding of material properties but also paves the way for future advancements in photoelectric applications.

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