Company Filing History:
Years Active: 2024-2025
Title: Ghassan Barbar: Innovator in Crystal Growth Technologies
Introduction
Ghassan Barbar is a notable inventor based in Neunkirchen, Germany. He has made significant contributions to the field of crystal growth, holding a total of five patents. His innovative methods and apparatuses have advanced the techniques used in this specialized area of research and development.
Latest Patents
One of Ghassan Barbar's latest patents is a method for growing crystals using PVT, PVD, or CVD techniques. This method involves providing a chamber for crystal growth, which includes a crucible with a seed crystal and base material, temperature monitoring devices, a gas supply device, and pressure monitoring equipment. The process includes evacuating the chamber, flushing it with inert gas, and heating it to a growth temperature between 2000 to 2400° C. The method also details the regulation of process parameters and the cooling down of the chamber after the growth process. Another significant patent is a crystal growth apparatus featuring a movable seed fixture. This apparatus includes a container that can be arranged in a heating chamber and a seed fixture element that allows for adjustable distance between the seed surface and the base section.
Career Highlights
Throughout his career, Ghassan Barbar has worked with reputable companies such as Ebner Industrieofenbau GmbH and Famatec GmbH. His experience in these organizations has contributed to his expertise in crystal growth technologies and has allowed him to develop innovative solutions in this field.
Collaborations
Ghassan has collaborated with notable individuals in his field, including Robert Ebner and Chih-Yung Hsiung. These collaborations have further enriched his work and have led to advancements in crystal growth methodologies.
Conclusion
Ghassan Barbar is a distinguished inventor whose work in crystal growth has led to significant advancements in the field. His innovative patents and collaborations highlight his commitment to pushing the boundaries of technology in crystal growth.