George T Wenning

Title: The Innovations of George T. Wenning

Introduction

George T. Wenning is a notable inventor based in Manassas, Virginia. He has made significant contributions to the field of semiconductor technology, particularly in the development of dynamic random access memory (DRAM) devices. His innovative approach has led to advancements in memory cell design and fabrication methods.

Latest Patents

Wenning holds a patent for a method of fabricating a random access memory device. This patent describes a dynamic random access memory fabricated on a monolithic chip of semiconductor material. The memory consists of an array of memory cells that are controlled for reading and writing by word and bit lines. Each memory cell is designed as a single field effect transistor structure, which boasts improved electrical charge storage capability. The unique arrangement of the electrical capacitance structure enhances the performance of the memory cells, allowing for increased density and better operating characteristics.

Career Highlights

Wenning's career is marked by his work at the International Business Machines Corporation (IBM), where he has contributed to various projects in semiconductor technology. His expertise in memory device fabrication has positioned him as a key figure in the advancement of memory technology.

Collaborations

Throughout his career, Wenning has collaborated with notable colleagues, including Ronald P. Esch and Robert M. Folsom. These collaborations have fostered innovation and have led to significant advancements in the field of semiconductor devices.

Conclusion

George T. Wenning's contributions to the field of dynamic random access memory have had a lasting impact on semiconductor technology. His innovative methods and designs continue to influence the development of memory devices today.