Company Filing History:
Years Active: 1986
Title: The Innovations of George S. Gati
Introduction
George S. Gati is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of technology, particularly in the area of semiconductor design. His innovative work has led to the development of a unique patent that addresses critical challenges in integrated circuit manufacturing.
Latest Patents
George S. Gati holds a patent for a composite insulator structure. This invention involves a composite insulator structure that separates adjacent layers of patterned metal on a large-scale integration (LSI) chip. The design features a bottom layer of sputtered oxide that is thicker than the top layer, which is preferably planarized. The top layer is made of conformal plasma nitride, which serves to uncover unwanted projections on the underlying metal and prevents interlevel shorting between the patterned layers. This innovation is crucial for enhancing the performance and reliability of semiconductor devices.
Career Highlights
George S. Gati is associated with the International Business Machines Corporation (IBM), where he has contributed to various projects and advancements in technology. His work at IBM has allowed him to collaborate with some of the brightest minds in the industry, furthering the development of innovative solutions in semiconductor technology.
Collaborations
Some of his notable coworkers include Albert P. Lee and Geraldine C. Schwartz. Their collaborative efforts have played a significant role in advancing the projects they have worked on together.
Conclusion
George S. Gati's contributions to the field of semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient and reliable electronic devices.