George F Holbrook

Title: The Innovations of George F. Holbrook

Introduction

George F. Holbrook is a notable inventor based in Camillus, NY (US). He is recognized for his contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique patent that addresses a significant challenge in the industry.

Latest Patents

Holbrook holds a patent for a "Premature breakage resistant semiconductor wafer and method for the fabrication thereof." This invention discloses a breakage-resistant semiconductor wafer designed to enhance durability. The wafer features intersecting grooves on one side, which facilitate its ultimate subdivision. A portion of the wafer remains ungrooved, significantly increasing its strength and preventing premature breakage. When subdivision is desired, laser scribe lines are formed on the opposite side of the wafer in alignment with the grooves. In an alternate embodiment, the second side of the wafer is also grooved, with grooves traversing the entirety of the wafer.

Career Highlights

Holbrook has made significant strides in his career, particularly through his work at General Electric Company. His innovative spirit and technical expertise have contributed to advancements in semiconductor technology.

Collaborations

Some of his notable coworkers include Bernard R. Tuft and Earl C. Williams. Their collaborative efforts have likely played a role in the development of groundbreaking technologies within the company.

Conclusion

George F. Holbrook's contributions to semiconductor technology exemplify the spirit of innovation. His patent for a breakage-resistant semiconductor wafer showcases his commitment to enhancing the durability and functionality of electronic components.