Goldsboro, NC, United States of America

George C Hudson


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1995

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of George C. Hudson

Introduction

George C. Hudson is a notable inventor based in Goldsboro, NC (US). He has made significant contributions to the field of chemical vapor deposition, particularly in the growth of diamond films. His innovative techniques have the potential to advance various applications in materials science and engineering.

Latest Patents

Hudson holds a patent for a method titled "Chemical vapor deposition of diamond films using water-based plasma." This patent describes a chemical vapor deposition (CVD) technique for the growth of diamond films using vapor mixtures of selected compounds. The process involves the reaction of these compounds in a plasma created by a confined RF discharge, which produces diamond films on both diamond and non-diamond substrates. The preferred embodiment of this invention utilizes a gas phase mixture containing at least 20% water, which acts as an etchant species, and an alcohol that provides the necessary carbon precursor at low temperatures and pressures.

Career Highlights

Throughout his career, Hudson has been associated with the Research Triangle Institute, where he has contributed to various research projects and innovations. His work in developing a CVD apparatus has been instrumental in advancing the understanding and application of diamond film growth.

Collaborations

Hudson has collaborated with notable colleagues, including Ronald A. Rudder and Robert C. Hendry. These collaborations have fostered a productive environment for innovation and research in the field of chemical vapor deposition.

Conclusion

George C. Hudson's contributions to the field of chemical vapor deposition and diamond film growth exemplify the spirit of innovation. His patented techniques and collaborative efforts continue to influence advancements in materials science.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…