Genru Yuan

Title: Genru Yuan: Innovator in III-V-Nitride Growth Technology

Introduction

Genru Yuan is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the growth of III-V-nitride materials. His innovative approach has led to advancements that enhance the efficiency of light-emitting diodes.

Latest Patents

Genru Yuan holds a patent for a substrate used for III-V-nitride growth and the manufacturing method thereof. This patent outlines a method that includes several key steps: first, providing a growth substrate and forming a buffer layer on its surface for subsequent growth of a luminescent epitaxial structure. Next, a semiconductor dielectric layer is formed on the buffer layer. The process involves etching semiconductor dielectric protrusions arranged at intervals, exposing the buffer layer between them. This method not only ensures the crystal quality of the grown luminescent epitaxial structure but also improves the luminescent efficiency of light-emitting diodes. The simplicity of the process makes it advantageous for reducing manufacturing costs and suitable for industrial production.

Career Highlights

Genru Yuan is currently associated with Chip Foundation Technology Ltd., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing technologies that are critical for modern electronic devices.

Collaborations

Genru Yuan has collaborated with notable colleagues in his field, including Maosheng Hao and Ming Xi. Their combined expertise has contributed to the success of various projects and innovations within the company.

Conclusion

Genru Yuan's contributions to III-V-nitride growth technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at Chip Foundation Technology Ltd. highlight his role as a key player in advancing light-emitting diode technology.