Mesquite, TX, United States of America

Gene R Frederick


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 217(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Gene R Frederick: Innovator in Silicon-Containing Films

Introduction

Gene R Frederick is a notable inventor based in Mesquite, TX (US). He has made significant contributions to the field of materials science, particularly in the deposition of silicon-containing films. His innovative work has led to advancements in semiconductor manufacturing processes.

Latest Patents

Gene R Frederick holds a patent for the "Deposition of silicon-containing films using organosilicon compounds." This patent describes a process in which the addition of nitrogen trifluoride to a gaseous organosilicon compound, such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS), results in enhanced silicon dioxide deposition rates. The oxide deposited through this method is capable of filling features with aspect ratios of at least 1.0 and may exhibit low mobile ion concentrations. Additionally, this process is applicable for depositing other silicon-containing films, including polysilicon and silicon nitride. Gene R Frederick has 1 patent to his name.

Career Highlights

Gene R Frederick has built a successful career at Texas Instruments Corporation, where he has been instrumental in developing advanced materials for semiconductor applications. His expertise in organosilicon compounds has positioned him as a key player in the industry.

Collaborations

Throughout his career, Gene has collaborated with notable colleagues, including Andrew P Lane and Douglas A Webb. These partnerships have fostered innovation and contributed to the success of various projects within the company.

Conclusion

Gene R Frederick's contributions to the field of silicon-containing films have had a lasting impact on semiconductor technology. His innovative patent and collaborative efforts continue to influence advancements in materials science.

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