Ge Yin

Title: Ge Yin - Innovator in Optical Proximity Correction

Introduction

Ge Yin is a notable inventor based in Sichuan, China. He has made significant contributions to the field of lithography through his innovative patent. His work focuses on enhancing the precision of optical proximity correction, which is crucial for advanced manufacturing processes in the semiconductor industry.

Latest Patents

Ge Yin holds a patent titled "Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm." This patent outlines a comprehensive method that includes obtaining first mask data according to a target pattern and constructing a level set function. The process involves performing forward simulation to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask. Furthermore, it details how to obtain a photoresist pattern based on the electric field distribution and calculate the imaging error between the photoresist pattern and the target pattern. The method continues with accompanying simulation to obtain a second structural vector electric field distribution, leading to the evolution of the level set function and iterative calculations until the mask data meets a preset condition.

Career Highlights

Ge Yin is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced lithography techniques. His work is instrumental in pushing the boundaries of what is possible in semiconductor manufacturing.

Collaborations

Ge Yin collaborates with esteemed colleagues, including Xiangang Luo and Weijie Kong, who contribute to his research endeavors and help advance the field of optical proximity correction.

Conclusion

Ge Yin's innovative work in optical proximity correction exemplifies the importance of advancements in lithography technology. His contributions are vital for the future of semiconductor manufacturing, showcasing the impact of dedicated inventors in the field.