Company Filing History:
Years Active: 1998-2008
Title: Gary W. Sadowniczak: Innovator in RF Power Amplification
Introduction
Gary W. Sadowniczak is a notable inventor based in Phoenix, AZ (US), recognized for his contributions to radio frequency (RF) technology. He holds 2 patents that showcase his innovative approach to enhancing RF power amplifier circuits.
Latest Patents
One of his latest patents is a "Power amplifier with VSWR detection and correction feature." This invention is designed to detect and measure output load mismatches in RF power amplifiers. The circuit includes a directional RF signal coupler that captures a coupled reflected RF signal, which indicates the output load mismatch. By processing this signal, the circuit generates bias control signals to adjust the RF power amplifier's operating characteristics, ultimately reducing output signal distortion. The goal is to maintain the RF power amplifier within a linear operating range, even in the presence of mismatch conditions.
Another significant patent is the "Method for altering a difference frequency signal and amplifier circuit." This invention features an amplifier circuit that includes a field effect transistor with a sub-harmonic termination connected to its drain. The circuit is designed to condition signals by reducing non-linear components of interference signals, thereby improving overall performance.
Career Highlights
Throughout his career, Gary has worked with prominent companies in the technology sector, including Freescale Semiconductor, Inc. and Motorola Corporation. His experience in these organizations has contributed to his expertise in RF technology and amplifier design.
Collaborations
Gary has collaborated with notable colleagues such as Joseph Staudinger and Benjamin Gilsdorf, further enhancing his innovative work in the field.
Conclusion
Gary W. Sadowniczak is a distinguished inventor whose work in RF power amplification has made significant strides in technology. His patents reflect a commitment to improving signal integrity and performance in RF applications.