Gary W Hoeye

Title: Gary W. Hoeye: Innovator in Borophosphosilicate Glass Deposition

Introduction

Gary W. Hoeye is a notable inventor based in Santa Ana, California. He has made significant contributions to the field of chemical vapor deposition, particularly in the development of borophosphosilicate glass. His innovative work has led to advancements in semiconductor manufacturing processes.

Latest Patents

Gary W. Hoeye holds a patent for a "Process for deposition of borophosphosilicate glass." This patent describes a method for chemical vapor deposition of borophosphosilicate glass on a silicon wafer at reduced pressure. The process involves placing a silicon wafer within a reactor tube, evacuating the tube to a pressure of less than 500 millitorr, and heating it to a temperature between 350°C and 500°C. A mixture of silane, phosphine, and boron trichloride gases is introduced into the reactor, along with oxygen, to form layers of borophosphosilicate glass on the silicon wafer. He has 1 patent to his name.

Career Highlights

Gary W. Hoeye is associated with Thermco Systems, Inc., where he has applied his expertise in chemical processes. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor fabrication techniques.

Collaborations

Throughout his career, Gary has collaborated with notable colleagues, including Thomas Foster and Jon C. Goldman. These partnerships have contributed to the advancement of technologies in the field.

Conclusion

Gary W. Hoeye's contributions to the field of chemical vapor deposition and his innovative patent for borophosphosilicate glass deposition highlight his role as a significant inventor in the semiconductor industry. His work continues to influence advancements in manufacturing processes.