Gakuji Uozumi

Title: Gakuji Uozumi: Innovator in Ferroelectric Thin Films

Introduction

Gakuji Uozumi is a notable inventor based in Saitama, Japan. He has made significant contributions to the field of materials science, particularly in the development of ferroelectric thin films. His innovative work has implications for nonvolatile memory technologies.

Latest Patents

Uozumi holds a patent for "Ferroelectric thin films and solutions: compositions." This patent describes a ferroelectric thin film formed from a liquid composition through sol-gel processing. The film exhibits a large amount of polarization, improved retention, and imprint characteristics compared to traditional materials like PZT. It features minute grains, fine film quality, homogeneous electrical properties, and low leakage currents, making it suitable for nonvolatile memories. The composition includes a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, with specific parameters for metal atom ratios.

Career Highlights

Throughout his career, Uozumi has focused on advancing the technology behind ferroelectric materials. His research has led to significant improvements in the performance of thin films, which are critical for various electronic applications. His work is recognized for its potential to enhance the efficiency and reliability of memory devices.

Collaborations

Uozumi has collaborated with notable colleagues in his field, including Shan Sun and Thomas Domokos Hadnagy. These partnerships have contributed to the depth and breadth of his research, fostering innovation in ferroelectric materials.

Conclusion

Gakuji Uozumi's contributions to the field of ferroelectric thin films highlight his role as an influential inventor. His patented innovations pave the way for advancements in nonvolatile memory technologies, showcasing the importance of his work in the realm of materials science.