Company Filing History:
Years Active: 2003
Title: Gabriela Brase: Innovator in Copper Metallization Technology
Introduction
Gabriela Brase is a prominent inventor based in Maroues-en-Hunpoix, France. She has made significant contributions to the field of semiconductor technology, particularly in the area of copper metallization processes.
Latest Patents
Gabriela holds a patent for the 'Via first' dual damascene process for copper metallization. This innovative process involves forming an interconnection pattern over the surface of a silicon wafer, where both the vias and trenches of the pattern are filled with copper. The method utilizes a silicon nitride film as an etch stop and incorporates an anti-reflection coating for filling the vias.
Career Highlights
Gabriela Brase has been instrumental in advancing semiconductor manufacturing techniques. Her work at Infineon AG has positioned her as a key player in the industry, contributing to the development of efficient and reliable metallization processes.
Collaborations
Throughout her career, Gabriela has collaborated with notable colleagues, including Uwe Schroeder and Karen Lynne Holloway. These partnerships have fostered innovation and enhanced the quality of her work.
Conclusion
Gabriela Brase's contributions to copper metallization technology exemplify her dedication to innovation in the semiconductor industry. Her patent and collaborative efforts continue to influence advancements in this critical field.