Gabriel P DeMunda

Title: Innovator Gabriel P. DeMunda: Pioneering Porous Semiconductor Technologies

Introduction

Gabriel P. DeMunda is a notable inventor based in Niagara Falls, NY, with a remarkable portfolio comprising three patents. His innovations primarily focus on the field of semiconductor technology, contributing significantly to the advancement of efficient doping processes.

Latest Patents

DeMunda's latest patents include groundbreaking work on porous silicon nitride semiconductor dopant carriers. This invention reveals new porous semiconductor dopant carriers and outlines a method for diffusion doping of semiconductors via vapor phase transport of n or p-type dopants. The dopants mentioned range from phosphorus and arsenic to cadmium, and they are transported to the semiconductor host substrate using a highly advanced, porous, inert, and thermally stable silicon nitride carrier material. Another patent centers around similar technology, focusing on porous semiconductor dopant carriers made from various materials such as silicon carbide and elemental silicon, ensuring robust and efficient doping processes.

Career Highlights

Throughout his career, DeMunda has worked with prestigious firms, including Kennecott Corporation and The Carborundum Company, where he honed his expertise in material sciences and semiconductor technologies. His work there laid a strong foundation for his later inventions.

Collaborations

Gabriel P. DeMunda has had the pleasure of collaborating with esteemed colleagues like Richard E. Tressler and Gregory A. Kaiser. Together, they have contributed to the evolution of semiconductor technology, pushing the boundaries of innovation in the field.

Conclusion

Gabriel P. DeMunda stands out as a visionary in the semiconductor industry, with his three patents reflecting his commitment to advancing technology. His contributions have not only enhanced the capabilities of semiconductor dopant carriers but have also paved the way for future innovations in the field.